Characteristics of MBE-grown heterostructure HgCdTe/CdTe/Si materials and planar photovoltaic devices

被引:0
|
作者
Ashokan, R. [1 ]
Sivananthan, S. [1 ]
机构
[1] Microphysics Laboratory, Dept. Phys., Univ. Illinois Chicago, Chicago, IL 60607, United States
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:88 / 94
相关论文
共 50 条
  • [1] Characteristics of MBE-grown heterostructure HgCdTe/CdTe/Si materials and planar photovoltaic devices
    Ashokan, R
    Sivananthan, S
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 67 (1-2): : 88 - 94
  • [2] A Study of Sidewall Effects in HgCdTe Photoconductors Passivated with MBE-Grown CdTe
    J. Zhang
    G. K. O. Tsen
    J. Antoszewski
    J. M. Dell
    L. Faraone
    W. D. Hu
    Journal of Electronic Materials, 2010, 39 : 1019 - 1022
  • [3] A Study of Sidewall Effects in HgCdTe Photoconductors Passivated with MBE-Grown CdTe
    Zhang, J.
    Tsen, G. K. O.
    Antoszewski, J.
    Dell, J. M.
    Faraone, L.
    Hu, W. D.
    JOURNAL OF ELECTRONIC MATERIALS, 2010, 39 (07) : 1019 - 1022
  • [4] Thermoelectric Characteristics in MBE-Grown HgCdTe-Based Superlattices
    S. Velicu
    C.H. Grein
    J. Zhao
    Y. Chang
    S.-Y. An
    A. Yadav
    K. Pipe
    W. Clark
    Journal of Electronic Materials, 2008, 37 : 1504 - 1508
  • [5] Thermoelectric Characteristics in MBE-Grown HgCdTe-Based Superlattices
    S. Velicu
    C.H. Grein
    J. Zhao
    Y. Chang
    S.-Y. An
    A. Yadav
    K.P. Pipe
    Journal of Electronic Materials, 2008, 37 (9) : 1509 - 1509
  • [6] Thermoelectric characteristics in MBE-Grown HgCdTe-Based superlattices
    Velicu, S.
    Grein, C. H.
    Zhao, J.
    Chang, Y.
    An, S. -Y.
    Yadav, A.
    Pipe, K.
    Clark, W.
    JOURNAL OF ELECTRONIC MATERIALS, 2008, 37 (09) : 1504 - 1508
  • [7] Native Defects in MBE-grown CdTe
    Olender, Karolina
    Wosinski, Tadeusz
    Makosa, Andrzej
    Tkaczyk, Zbigniew
    Kolkovsky, Valery
    Karczewski, Grzegorz
    PHYSICS OF SEMICONDUCTORS, 2013, 1566 : 89 - 90
  • [8] MBE-grown HgCdTe heterojunction structures for IRFPAs
    Wu, OK
    Rajavel, RD
    DeLyon, TJ
    Jensen, JE
    Cockrum, CA
    Johnson, SM
    Venzor, GM
    Chapman, GR
    Wilson, JA
    Patten, EA
    Radford, WA
    PHOTODETECTORS: MATERIALS AND DEVICES, 1996, 2685 : 16 - 27
  • [9] Incorporation and activation of arsenic in MBE-grown HgCdTe
    Tsen, G. K. O.
    Sewell, R. H.
    Atanacio, A. J.
    Prince, K. E.
    Musca, C. A.
    Dell, J. M.
    Faraone, L.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2008, 23 (01)
  • [10] Recent progress in MBE grown HgCdTe materials and devices at UWA
    Gu, R.
    Lei, W.
    Antoszewski, J.
    Madni, I.
    Umana-Menbreno, G.
    Faraone, L.
    INFRARED TECHNOLOGY AND APPLICATIONS XLII, 2016, 9819