首页
学术期刊
论文检测
AIGC检测
热点
更多
数据
Promising spin-valve magnetoresistive memory chips
被引:0
|
作者
:
Inst Problem Upravleniya RAN, Moscow, Russia
论文数:
0
引用数:
0
h-index:
0
Inst Problem Upravleniya RAN, Moscow, Russia
[
1
]
机构
:
来源
:
Avt Telemekh
|
/ 10卷
/ 147-158期
关键词
:
D O I
:
暂无
中图分类号
:
学科分类号
:
摘要
:
Magnetic film storage
引用
收藏
相关论文
共 50 条
[1]
Thermal microscopy of spin-valve and magnetoresistive devices
Lederman, M
论文数:
0
引用数:
0
h-index:
0
机构:
READ-RITE Corp., Fremont CA 94539
Lederman, M
Richardson, D
论文数:
0
引用数:
0
h-index:
0
机构:
READ-RITE Corp., Fremont CA 94539
Richardson, D
Tong, HC
论文数:
0
引用数:
0
h-index:
0
机构:
READ-RITE Corp., Fremont CA 94539
Tong, HC
IEEE TRANSACTIONS ON MAGNETICS,
1997,
33
(05)
: 2923
-
2925
[2]
Magnetostatic effects in giant magnetoresistive spin-valve
Cross, RW
论文数:
0
引用数:
0
h-index:
0
机构:
NATL INST STAND & TECHNOL,DIV ELECTROMAGNET TECHNOL,BOULDER,CO 80303
NATL INST STAND & TECHNOL,DIV ELECTROMAGNET TECHNOL,BOULDER,CO 80303
Cross, RW
Kim, YK
论文数:
0
引用数:
0
h-index:
0
机构:
NATL INST STAND & TECHNOL,DIV ELECTROMAGNET TECHNOL,BOULDER,CO 80303
NATL INST STAND & TECHNOL,DIV ELECTROMAGNET TECHNOL,BOULDER,CO 80303
Kim, YK
Oti, JO
论文数:
0
引用数:
0
h-index:
0
机构:
NATL INST STAND & TECHNOL,DIV ELECTROMAGNET TECHNOL,BOULDER,CO 80303
NATL INST STAND & TECHNOL,DIV ELECTROMAGNET TECHNOL,BOULDER,CO 80303
Oti, JO
Russek, SE
论文数:
0
引用数:
0
h-index:
0
机构:
NATL INST STAND & TECHNOL,DIV ELECTROMAGNET TECHNOL,BOULDER,CO 80303
NATL INST STAND & TECHNOL,DIV ELECTROMAGNET TECHNOL,BOULDER,CO 80303
Russek, SE
APPLIED PHYSICS LETTERS,
1996,
69
(25)
: 3935
-
3937
[3]
Spin-valve and pseudo-spin-valve device switching for giant magnetoresistive random access memory applications
Katti, RR
论文数:
0
引用数:
0
h-index:
0
机构:
Honeywell Int Inc, Solid State Elect Ctr, Plymouth, MN 55441 USA
Honeywell Int Inc, Solid State Elect Ctr, Plymouth, MN 55441 USA
Katti, RR
Zou, D
论文数:
0
引用数:
0
h-index:
0
机构:
Honeywell Int Inc, Solid State Elect Ctr, Plymouth, MN 55441 USA
Honeywell Int Inc, Solid State Elect Ctr, Plymouth, MN 55441 USA
Zou, D
Reed, D
论文数:
0
引用数:
0
h-index:
0
机构:
Honeywell Int Inc, Solid State Elect Ctr, Plymouth, MN 55441 USA
Honeywell Int Inc, Solid State Elect Ctr, Plymouth, MN 55441 USA
Reed, D
Kaakani, H
论文数:
0
引用数:
0
h-index:
0
机构:
Honeywell Int Inc, Solid State Elect Ctr, Plymouth, MN 55441 USA
Honeywell Int Inc, Solid State Elect Ctr, Plymouth, MN 55441 USA
Kaakani, H
IEEE TRANSACTIONS ON MAGNETICS,
2003,
39
(05)
: 2848
-
2850
[4]
Spin-valve structures for giant magnetoresistive sensor applications
Avram, M
论文数:
0
引用数:
0
h-index:
0
机构:
Natl Inst Res & Dev Microtechnol, Bucharest, Romania
Natl Inst Res & Dev Microtechnol, Bucharest, Romania
Avram, M
Angelescu, A
论文数:
0
引用数:
0
h-index:
0
机构:
Natl Inst Res & Dev Microtechnol, Bucharest, Romania
Natl Inst Res & Dev Microtechnol, Bucharest, Romania
Angelescu, A
Kleps, I
论文数:
0
引用数:
0
h-index:
0
机构:
Natl Inst Res & Dev Microtechnol, Bucharest, Romania
Natl Inst Res & Dev Microtechnol, Bucharest, Romania
Kleps, I
Simion, M
论文数:
0
引用数:
0
h-index:
0
机构:
Natl Inst Res & Dev Microtechnol, Bucharest, Romania
Natl Inst Res & Dev Microtechnol, Bucharest, Romania
Simion, M
Miu, M
论文数:
0
引用数:
0
h-index:
0
机构:
Natl Inst Res & Dev Microtechnol, Bucharest, Romania
Natl Inst Res & Dev Microtechnol, Bucharest, Romania
Miu, M
2001 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOL 1 & 2, PROCEEDINGS,
2001,
: 371
-
374
[5]
The magnetoresistive effect induced by stress in spin-valve structures
Qian Li-Jie
论文数:
0
引用数:
0
h-index:
0
机构:
Yangzhou Univ, Coll Phys Sci & Technol, Yangzhou 225002, Peoples R China
Yangzhou Univ, Coll Phys Sci & Technol, Yangzhou 225002, Peoples R China
Qian Li-Jie
Xu Xiao-Yong
论文数:
0
引用数:
0
h-index:
0
机构:
Yangzhou Univ, Coll Phys Sci & Technol, Yangzhou 225002, Peoples R China
Yangzhou Univ, Coll Phys Sci & Technol, Yangzhou 225002, Peoples R China
Xu Xiao-Yong
Hu Jing-Guo
论文数:
0
引用数:
0
h-index:
0
机构:
Yangzhou Univ, Coll Phys Sci & Technol, Yangzhou 225002, Peoples R China
Yangzhou Univ, Coll Phys Sci & Technol, Yangzhou 225002, Peoples R China
Hu Jing-Guo
CHINESE PHYSICS B,
2009,
18
(06)
: 2589
-
2595
[6]
Low frequency magnetoresistive noise in spin-valve structures
Ozbay, A.
论文数:
0
引用数:
0
h-index:
0
机构:
Univ Delaware, Dept Phys & Astron, Newark, DE 19716 USA
Univ Delaware, Dept Phys & Astron, Newark, DE 19716 USA
Ozbay, A.
Gokce, A.
论文数:
0
引用数:
0
h-index:
0
机构:
Univ Delaware, Dept Phys & Astron, Newark, DE 19716 USA
Univ Delaware, Dept Phys & Astron, Newark, DE 19716 USA
Gokce, A.
Flanagan, T.
论文数:
0
引用数:
0
h-index:
0
机构:
Univ Delaware, Dept Phys & Astron, Newark, DE 19716 USA
Univ Delaware, Dept Phys & Astron, Newark, DE 19716 USA
Flanagan, T.
Stearrett, R. A.
论文数:
0
引用数:
0
h-index:
0
机构:
Univ Delaware, Dept Phys & Astron, Newark, DE 19716 USA
Univ Delaware, Dept Phys & Astron, Newark, DE 19716 USA
Stearrett, R. A.
Nowak, E. R.
论文数:
0
引用数:
0
h-index:
0
机构:
Univ Delaware, Dept Phys & Astron, Newark, DE 19716 USA
Univ Delaware, Dept Phys & Astron, Newark, DE 19716 USA
Nowak, E. R.
Nordman, C.
论文数:
0
引用数:
0
h-index:
0
机构:
Nonvolatile Elect, Eden Prairie, MN 55344 USA
Univ Delaware, Dept Phys & Astron, Newark, DE 19716 USA
Nordman, C.
APPLIED PHYSICS LETTERS,
2009,
94
(20)
[7]
A spin-valve memory cell
Wang, ZG
论文数:
0
引用数:
0
h-index:
0
机构:
TOHOKU UNIV,ELECT COMMUN RES INST,SENDAI,MIYAGI 980,JAPAN
TOHOKU UNIV,ELECT COMMUN RES INST,SENDAI,MIYAGI 980,JAPAN
Wang, ZG
Nakamura, Y
论文数:
0
引用数:
0
h-index:
0
机构:
TOHOKU UNIV,ELECT COMMUN RES INST,SENDAI,MIYAGI 980,JAPAN
TOHOKU UNIV,ELECT COMMUN RES INST,SENDAI,MIYAGI 980,JAPAN
Nakamura, Y
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS,
1996,
159
(1-2)
: 233
-
235
[8]
The magnetoresistive effect induced by stress in spin-valve structures
钱丽洁
论文数:
0
引用数:
0
h-index:
0
机构:
College of Physics Science and Technology,Yangzhou University
College of Physics Science and Technology,Yangzhou University
钱丽洁
论文数:
引用数:
h-index:
机构:
许小勇
论文数:
引用数:
h-index:
机构:
胡经国
Chinese Physics B,
2009,
18
(06)
: 2589
-
2595
[9]
Differential type giant magnetoresistive memory using spin-valve film with a NiO pinning layer
Yamane, H
论文数:
0
引用数:
0
h-index:
0
机构:
Oki Elect Ind Co Ltd, Res Lab, Hachioji, Tokyo 193, Japan
Yamane, H
Kobayashi, M
论文数:
0
引用数:
0
h-index:
0
机构:
Oki Elect Ind Co Ltd, Res Lab, Hachioji, Tokyo 193, Japan
Kobayashi, M
JOURNAL OF APPLIED PHYSICS,
1998,
83
(09)
: 4862
-
4868
[10]
Combined Technology Fabrication of Spin-Valve Magnetoresistive Elements and Micromagnets
Amelichev, V. V.
论文数:
0
引用数:
0
h-index:
0
机构:
LLC Sci Prod Enterprise Technol, Moscow 124498, Russia
Res & Prod Complex Technol Ctr MIET, Moscow 124498, Russia
LLC Sci Prod Enterprise Technol, Moscow 124498, Russia
Amelichev, V. V.
Belyakov, P. A.
论文数:
0
引用数:
0
h-index:
0
机构:
LLC Sci Prod Enterprise Technol, Moscow 124498, Russia
Res & Prod Complex Technol Ctr MIET, Moscow 124498, Russia
LLC Sci Prod Enterprise Technol, Moscow 124498, Russia
Belyakov, P. A.
Kostyuk, D. V.
论文数:
0
引用数:
0
h-index:
0
机构:
LLC Sci Prod Enterprise Technol, Moscow 124498, Russia
Res & Prod Complex Technol Ctr MIET, Moscow 124498, Russia
LLC Sci Prod Enterprise Technol, Moscow 124498, Russia
Kostyuk, D. V.
Vasil'ev, D. V.
论文数:
0
引用数:
0
h-index:
0
机构:
LLC Sci Prod Enterprise Technol, Moscow 124498, Russia
Res & Prod Complex Technol Ctr MIET, Moscow 124498, Russia
LLC Sci Prod Enterprise Technol, Moscow 124498, Russia
Vasil'ev, D. V.
Orlov, E. P.
论文数:
0
引用数:
0
h-index:
0
机构:
LLC Sci Prod Enterprise Technol, Moscow 124498, Russia
Res & Prod Complex Technol Ctr MIET, Moscow 124498, Russia
LLC Sci Prod Enterprise Technol, Moscow 124498, Russia
Orlov, E. P.
Kazakov, Yu. V.
论文数:
0
引用数:
0
h-index:
0
机构:
Res & Prod Complex Technol Ctr MIET, Moscow 124498, Russia
LLC Sci Prod Enterprise Technol, Moscow 124498, Russia
Kazakov, Yu. V.
Kasatkin, S. I.
论文数:
0
引用数:
0
h-index:
0
机构:
Russian Acad Sci, Trapeznikov Inst Control Sci, Moscow 117997, Russia
LLC Sci Prod Enterprise Technol, Moscow 124498, Russia
Kasatkin, S. I.
Krikunov, A. I.
论文数:
0
引用数:
0
h-index:
0
机构:
LLC Res & Prod Complex Fotron Avto, Moscow 117105, Russia
LLC Sci Prod Enterprise Technol, Moscow 124498, Russia
Krikunov, A. I.
TECHNICAL PHYSICS,
2018,
63
(06)
: 848
-
850
←
1
2
3
4
5
→