ELECTRONIC CONDUCTION AND INSTABILITIES IN THIN FILMS OF AMORPHOUS SILICON DIOXIDE.

被引：0

作者：

Delima, J.J. ^{[1
]}

Krishna, K.V. ^{[1
]}

Owen, A.E. ^{[1
]}

机构：

[1] Univ of Edinburgh, Dep of Electrical, Engineering, Edinburgh, Scotl, Univ of Edinburgh, Dep of Electrical Engineering, Edinburgh, Scotl

来源：

Philosophical Magazine B: Physics of Condensed Matter; Electronic, Optical and Magnetic Properties | 1986年 / 53卷 / 02期

关键词：

ELECTRIC CONDUCTIVITY - Measurements - SPUTTERING;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The d. c. electrical properties of well annealed r. f. sputtered silicon dioxide films are reported. It has been observed that although these films have low- and high-conducting states similar to those previously reported for amorphous silicon dioxide, there are also very significant differences from previously observed data. The low-and high-conducting states have been characterized and it has been shown that both these states are stable bulk phenomena. The results are discussed in the light of previous reports and the conduction is tentatively interpreted in terms of single-carrier space-charge-limited current.

引用

页码：115 / 131

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