Erratum: fermi-level-pinning defects in highly n-doped silicon [Phys. Rev. Lett. 79, 4834 (1997)]

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作者：

Chadi, D.J.

Citrin, P.H.

Park, C.H.

Adler, D.L.

Marcus, M.A.

Gossmann, H.-J.

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Physical Review Letters | 1998年 / 80卷 / 20期

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[1] Fermi-level-pinning defects in highly n-doped silicon (vol 79, pg 4834, 1997)
Chadi, DJ
Citrin, PH
Park, CH
Adler, DL
Marcus, MA
Gossmann, HJ
PHYSICAL REVIEW LETTERS, 1998, 80 (20) : 4612 - 4612
[2] Fermi-level-pinning defects in highly n-doped silicon
Chadi, DJ
Citrin, PH
Park, CH
Adler, DL
Marcus, MA
Gossmann, HJ
PHYSICAL REVIEW LETTERS, 1997, 79 (24) : 4834 - 4837
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