Visible electroluminescence from p-n junction porous Si diode with a polyaniline film contact

被引：0

作者：

Li, Hongjian ^{[1
,2
,3
]}

Huang, Baiyun ^{[1
]}

Yi, Danqing ^{[2
]}

Cui, Haoyang ^{[3
]}

Peng, Jingcui ^{[3
]}

机构：

[1] Lab. for Powder Metall., Central South Univ., Changsha 410083, China

[2] Coll. of Mat. Sci. and Eng., Central South Univ., Changsha 410083, China

[3] Dept. of Appl. Phys., Hu'nan Univ., Changsha 410082, China

来源：

Chinese Optics Letters | 2003年 / 1卷 / 11期

关键词：

Electroluminescence; -; Photoluminescence;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

We have fabricated a light emitting diode using a p-type conducting polyaniline layer deposited on a n-type porous silicon (PS) layer. The contact formed between a p-type conducting polyaniline layer and a n-type PS wafer has rectified behaviour demonstrated clearly by the I-V curves. The series resistance Rs in the p-type conducting polyaniline/n-PS diode is reduced greatly and has a lower onset voltage compared with ITO/n-PS diode. The PS has an orange photoluminescence (PL) band after coating with polyaniline. Visible electroluminescence (EL) has been obtained from this junction when a forward bias is applied. The emission band is very broad extending from 600-803 nm with a peak at 690 nm.

引用

页码：677 / 679

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