Hydrogen-free plasma-enhanced chemical vapor deposition of silicon dioxide using tetra-isocyanate-silane (Si(NCO)4)

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Tokyo Inst of Technology, Tokyo, Japan ^{[1
]}

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来源：

Jpn J Appl Phys Part 2 Letter | / 6 B卷 / L772-L774期

关键词：

Composition - Density (optical) - Dielectric films - Electric conductivity - Etching - Oxygen - Permittivity - Plasma interactions - Refractive index - Silanes - Silica;

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摘要：

Deposition of silicon dioxide by plasma-enhanced chemical vapor deposition (PECVD) technique using tetraisocyanate-silane (Si(NCO)4:TICS) and oxygen for interlayer dielectric film application is proposed. Film properties strongly depend on the gas composition. The film which was deposited under an oxygen-rich condition was water-free after deposition. The film density, refractive index, resistivity, and dielectric constant were 2.3 g/cm3, 1.46, 5 × 1014 Ω&middotcm, and 3.6, respectively. The etch rate by buffered HF was 330 nm/min.

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