TEMPERATURE DEPENDENCE OF THE POLARIZATIONAL HYSTERESIS OF THE VOLT-FARAD CHARACTERISTICS OF Al-(Ba0. 9Sr0. 1)TiO3-Si STRUCTURES.

被引：0

作者：

Gorodnik, L.B.

Levshin, N.L.

Nevzorov, A.N.

机构：

来源：

Moscow University Physics Bulletin (English Translation of Vestnik Moskovskogo Universiteta, Fizik | 1986年 / 41卷 / 03期

关键词：

ALUMINUM AND ALLOYS - ELECTRIC MEASUREMENTS - Capacitance - HYSTERESIS - SEMICONDUCTING SILICON - Substrates;

D O I：

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摘要：

The role of ferroelectric polarizational hysteresis and of the possible inhomogeneity of the phase composition of the ferroelectric film is examined. The results indicate that studying the hysteresis of the VFC at various temperatures may be a very sensitive method for recording the Curie temperature. In addition, the homogeneity of the phase composition of the ferroelectric film may be judged from the form of the polarizational hysteresis.

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页码：104 / 106