Design of GaAs microstrip particle detectors

被引：0

作者：

Shao, Chuanfen ^{[1
]}

Shi, Changxin ^{[1
]}

Ling, Xing ^{[1
]}

Wen, Boying ^{[2
]}

机构：

[1] Inst. of Microelectronic Technol., Shanghai Jiaotong Univ., Shanghai 200030, China

[2] Sch. of Sci., Shanghai Univ., Shanghai 200436, China

来源：

Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics | 2004年 / 24卷 / 01期

关键词：

Current density - Detectors - Semiconducting gallium arsenide;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

This paper introduces a new idea and new design of chip and process of the manufacture of GaAs microstrip particle detectors. The length of each microstrip is 17 000 μm, and their widths are 20,50,100,200,300 μm respectively. The pitch of microstrip has 4 kinds, which are 50,100,200 and 300 μm. The area of the chip is 5.95 mm×17.00 mm. Their highest reverse breakdown voltage is 240 V, and the lowest reverse leakage current density is 0.025 μA/mm2. They have high illumination-sensitivity. The irradiation characteristics of these microstrip particle detectors will be reported in another paper.

引用

页码：60 / 63

共 50 条

[1] LARGE SIZE MICROSTRIP PARTICLE DETECTORS
RICHTER, J
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1992, 323 (1-2): : 263 - 265
[2] GaAs as a material for particle detectors
Ayzenshtat, AI
Budnitsky, DL
Koretskaya, OB
Okaevich, LS
Novikov, VA
Potapov, AI
Tolbanov, OP
Tyazhev, AV
Vorobiev, AP
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2002, 494 (1-3): : 120 - 127
[3] Advanced technology steps in the fabrication of GaAs microstrip detectors
Albertz, D
Braunschweig, W
Karpinski, W
Krais, R
Kubicki, T
Lubelsmeyer, K
Rente, C
Syben, O
Tenbusch, F
Toporowski, M
Wittmer, B
Xiao, WJ
NUCLEAR PHYSICS B, 1998, : 438 - 441
[4] Spectra properties of GaAs particle detectors
Shao, Chuanfen
Shi, Changxin
Chen, Hongfang
Li, Cheng
Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics, 2000, 20 (02): : 200 - 205
[5] Light emitted GaAs particle detectors
Pozela, J
Juciene, V
Pozela, K
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1998, 410 (01): : 111 - 114
[6] Irradiation damage in GaAs particle detectors
Brozel, M.R.
Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1997, 395 (01): : 88 - 93
[7] Assessment of SI GaAs particle detectors
Berwick, K
Brozel, MR
Buttar, CM
Sellin, P
Young, SM
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 44 (1-3): : 330 - 333
[8] Irradiation damage in GaAs particle detectors
Brozel, MR
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1997, 395 (01): : 88 - 93
[9] RADIATION TESTS ON GAAS PARTICLE DETECTORS
KARPINSKI, W
KUBICKI, T
LUBELSMEYER, K
TOPOROWSKY, M
WALLRAFF, W
HEIME, K
WULLER, R
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1992, 323 (03): : 635 - 637
[10] Radiation hardness of MSM biasing structures for GaAs microstrip detectors
Physikalisches Inst, RWTH Aachen, Aachen, Germany
Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1997, 388 (03) : 390 - 394

← 1 2 3 4 5 →