Depth Profiling of Si Oxidation States in Si-Implanted SiO2 Films by X-Ray Photoelectron Spectroscopy

被引:0
|
作者
机构
[1] Liu, Yang
[2] Fu, Yong Qing
[3] Chen, Tu Pei
[4] Tse, Man Siu
[5] Fung, Steve
[6] Hsieh, Jang-Hsing
[7] Yang, Xiao Hong
来源
Liu, Y. | 1600年 / Japan Society of Applied Physics卷 / 42期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
14
引用
收藏
相关论文
共 50 条
  • [1] Depth profiling of Si oxidation states in Si-implanted SiO2 films by X-ray photoelectron spectroscopy
    Liu, Y
    Fu, YQ
    Chen, TP
    Tse, MS
    Fung, S
    Hsieh, JH
    Yang, XH
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2003, 42 (11B): : L1394 - L1396
  • [2] A study on Si nanocrystal formation in Si-implanted SiO2 films by x-ray photoelectron spectroscopy
    Liu, Y
    Chen, TP
    Fu, YQ
    Tse, MS
    Hsieh, JH
    Ho, PF
    Liu, YC
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2003, 36 (19) : L97 - L100
  • [3] Depth profiling of Si nanocrystals in Si-implanted SiO2 films by spectroscopic ellipsometry
    Chen, TP
    Liu, Y
    Tse, MS
    Ho, PF
    Dong, G
    Fung, S
    APPLIED PHYSICS LETTERS, 2002, 81 (25) : 4724 - 4726
  • [4] Evolutions and distributions of Si nanocrystals and other Si oxidation states in Si-implanted SiO2 films
    Liu, Y
    Chen, TP
    Tse, MS
    Fu, YQ
    BIOMEMS AND NANOTECHNOLOGY, 2003, 5275 : 374 - +
  • [5] DEPTH PROFILING OF PLASMA ANODIZED SIO2/SI INTERFACE STRUCTURES BY USING X-RAY PHOTOELECTRON-SPECTROSCOPY
    SUDA, K
    HATTORI, T
    SURFACE SCIENCE, 1986, 168 (1-3) : 652 - 656
  • [6] Characterization of Si nanocrystals embedded in SiO2 with X-ray photoelectron spectroscopy
    Liu, Y
    Chen, TP
    Fu, YQ
    Hsieh, JH
    SCIENCE AND TECHNOLOGY OF NANOMATERIALS - ICMAT 2003, 2005, 23 : 11 - 14
  • [7] Behavior of hydrogen implanted into Si-implanted SiO2
    Ikeda, M
    Mitsusue, R
    Nakagawa, M
    Kondo, S
    Imai, M
    Imanishi, N
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2003, 209 : 154 - 158
  • [8] IN-DEPTH PROFILING OF SUBOXIDE COMPOSITIONS IN THE SIO2/SI INTERFACE BY ANGLE-RESOLVED X-RAY PHOTOELECTRON-SPECTROSCOPY
    TAKAKURA, M
    SUNADA, T
    MIYAZAKI, S
    HIROSE, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (12): : L2324 - L2326
  • [9] AN X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY OF THE THERMAL NITRIDATION OF SIO2/SI
    VASQUEZ, RP
    MADHUKAR, A
    GRUNTHANER, FJ
    NAIMAN, ML
    JOURNAL OF APPLIED PHYSICS, 1986, 60 (01) : 226 - 233
  • [10] Comparison of ultrathin SiO2/Si(100) and SiO2/Si(111) interfaces from soft x-ray photoelectron spectroscopy
    Ulrich, M. D.
    Rowe, J. E.
    Keister, J. W.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2006, 24 (04): : 2132 - 2137