NUMERICAL SIMULATION OF NONEQUILIBRIUM PROCESSES IN AN ELECTRON-HOLE PLASMA IN BINARY HETEROSTRUCTURES. 2. COMPUTATIONAL EXPERIMENT.

Heating of the electron-hole plasma (EHP) in semiconductor structures can substantially affect their properties. Such heating occurs if the energy of the carriers (electrons and holes) injected through the heterojunction substantially exceeds the thermal energy. The heating of a dense quasineutral EHP was simulated numerically based on the quasihydrodynamic equations. The situations in which the density and temperature distributions of the EHP under conditions of heating, though they turned out to be nonuniform, were characterized by scales of nonuniformity of the order of the dimensions of the system, were studied. The results of a computational experiment simulating a dense electron-hole plasma in binary heterostructures are presented.