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- [1] APPLICABILITY OF THE MOTT-SCHOTTKY EQUATION IN THE CASE OF HIGHLY DOPED SEMICONDUCTOR ELECTRODESSOVIET ELECTROCHEMISTRY, 1987, 23 (11): : 1430 - 1434GRILIKHES, MSSUKHOTIN, AMSHIK, AY
- [2] Flat-band potential of a semiconductor: using the Mott-Schottky equationJOURNAL OF CHEMICAL EDUCATION, 2007, 84 (04) : 685 - 688Gelderman, K.Lee, L.Donne, S. W.
- [3] Analysis of electrodes displaying frequency dispersion in Mott-Schottky testsJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2008, 155 (08) : C381 - C386Harrington, Scott P.Devine, Thomas M.
- [4] Interpretation and use of Mott-Schottky plots at the semiconductor/electrolyte interfaceJOURNAL OF THE CHEMICAL SOCIETY-FARADAY TRANSACTIONS, 1996, 92 (20): : 4083 - 4085Albery, WJOShea, GJSmith, AL
- [5] INTERPRETATION OF MOTT-SCHOTTKY PLOTS DETERMINED AT SEMICONDUCTOR-ELECTROLYTE SYSTEMSJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (05) : 711 - 712DEGRYSE, RGOMES, WPCARDON, FVENNIK, J
- [6] Inadequacy of the Mott-Schottky equation in strongly pinned double Schottky barriers with no deep donorsJOURNAL OF PHYSICS D-APPLIED PHYSICS, 2012, 45 (49)Schipani, F.Aldao, C. M.Ponce, M. A.
- [7] THE INFLUENCE OF PASSIVATION ON THE KINETICS OF THE DISSOLUTION OF IRON .1. OUTER LAYER OF THE PASSIVATING FILM AS A HEAVY DOPED THIN SEMICONDUCTOR AND MOTT-SCHOTTKY EQUATIONELECTROCHIMICA ACTA, 1989, 34 (02) : 109 - 112SUKHOTIN, AMGRILIKHES, MSLISOVAYA, EV
- [9] Mott-Schottky analysis of nanoporous semiconductor electrodes in dielectric state deposited on SnO2(F) conducting substratesJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2003, 150 (06) : E293 - E298Fabregat-Santiago, FGarcia-Belmonte, GBisquert, JBogdanoff, PZaban, A
- [10] Semiconductor Properties of Electrodeposited Manganese Dioxide for Electrochemical Capacitors: Mott-Schottky AnalysisJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2021, 168 (02)Forghani, MarvehMcCarthy, JulienCameron, Amanda P.Davey, Sofia B.Donne, Scott W.