Molecular beam epitaxial growth and characterization of ZnSTe epilayers and ZnSTe/ZnSe superlattices on Si substrates

被引：0
|
作者：
Chan, Y.W. [1 ]
Wang, H. [1 ]
Sou, I.K. [1 ]
Wong, K.S. [1 ]
Wong, G.K.L. [1 ]
机构：
[1] Hong Kong Univ of Science and, Technology, Kowloon, Hong Kong
来源：
Journal of Crystal Growth | 1995年 / 150卷 / 1 -4 pt 2期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：760 / 764
相关论文
共 50 条
  • [1] MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF ZNSTE EPILAYERS AND ZNSTE/ZNSE SUPERLATTICES ON SI SUBSTRATES
    CHAN, YW
    WANG, H
    SOU, IK
    WONG, KS
    WONG, GKL
    JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) : 760 - 764
  • [2] Characterization and growth of ZnSTe epilayers by hot-wall epitaxy
    Yu, YM
    Nam, S
    Rhee, JK
    O, B
    Lee, KS
    Choi, YD
    JOURNAL OF CRYSTAL GROWTH, 2000, 210 (04) : 521 - 526
  • [3] Molecular beam epitaxial growth of ZnSe layers on GaAs and Si substrates
    López-López, M
    Méndez-García, VH
    Meléndez-Lira, M
    Luyo-Alvarado, J
    Tamura, M
    Momose, K
    Yonezu, H
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2000, 220 (01): : 99 - 109
  • [4] ZnSTe coherently grown onto GaP substrates by molecular beam epitaxy using ZnS buffer layers
    Ichino, Kunio
    Kashiyama, Shota
    Nanba, Nao
    Hasegawa, Hiroyasu
    Abe, Tomoki
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2016, 253 (08): : 1476 - 1479
  • [5] ZNTE/ZNSTE DOPING SUPERLATTICES GROWN ON INP SUBSTRATES BY METALORGANIC VAPOR-PHASE EPITAXY
    YOKOGAWA, T
    NARUSAWA, T
    JOURNAL OF CRYSTAL GROWTH, 1992, 117 (1-4) : 480 - 483
  • [6] Molecular beam epitaxial growth and characterization of GaAs films on thin Si substrates
    Maehashi, K
    Nakashima, H
    Bertram, F
    Veit, P
    Christen, J
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (01): : 39 - 44
  • [7] Molecular beam epitaxial growth and characterization of GaAs films on thin Si substrates
    Maehashi, Kenzo
    Nakashima, Hisao
    Bertram, Frank
    Veit, Peter
    Christen, Jurgen
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1998, 37 (01): : 39 - 44
  • [8] GROWTH AND CHARACTERIZATION OF GAAS/GE EPILAYERS GROWN ON SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY
    SHELDON, P
    YACOBI, BG
    JONES, KM
    DUNLAVY, DJ
    JOURNAL OF APPLIED PHYSICS, 1985, 58 (11) : 4186 - 4193
  • [9] Molecular beam epitaxial growth and characterization of ZnSe on (001) ZnSe substrates and its application in light-emitting diodes
    Wenisch, H
    Schull, K
    Hommel, D
    Landwehr, G
    Siche, D
    Hartmann, H
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1996, 11 (01) : 107 - 115
  • [10] Si substrate treatment with nitrogen for molecular beam epitaxial growth of ZnSe
    Mendez-Garcia, VH
    Lopez-Lopez, M
    ELECTRONICS LETTERS, 1998, 34 (18) : 1791 - 1793
12345