Microhardness studies of antimony trisulphide single crystals grown by the chemical vapour transport technique

被引:0
|
作者
Vengatesan, B. [1 ]
Kanniah, N. [1 ]
Ramasamy, P. [1 ]
机构
[1] Anna Univ, India
关键词
Antimony Compounds--Chemical Vapor Deposition - Crystals--Growing - Ferroelectric Materials - Materials Testing--Hardness;
D O I
暂无
中图分类号
学科分类号
摘要
Single crystals of ferroelectric semiconductor antimony trisulfide (Sb2S3) have been grown by the chemical vapor transport technique using iodine as the transporting agent. Single crystals were obtained when antimony and sulfur in a stoichiometric ratio were used as the source together with iodine. The single crystals were subjected to studies of the Vickers microhardness. The Vickers microhardness increases with the increase in applied load. The yield strength of the Sb2S3 crystal was determined as 3.081 GPa.
引用
收藏
页码:245 / 247
相关论文
共 50 条
  • [1] MICROHARDNESS STUDIES OF ANTIMONY TRISULFIDE SINGLE-CRYSTALS GROWN BY THE CHEMICAL VAPOR TRANSPORT TECHNIQUE
    VENGATESAN, B
    KANNIAH, N
    RAMASAMY, P
    MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 1988, 104 : 245 - 247
  • [2] Micromorphological studies on the ZnSe single crystals grown by chemical vapour transport technique
    Tafreshi, MJ
    Balakrishnan, K
    Dhanasekaran, R
    PROCEEDINGS OF THE THIRTEENTH INTERNATIONAL CONFERENCE ON CHEMICAL VAPOR DEPOSITION, 1996, 96 (05): : 360 - 365
  • [3] Micromorphological studies on the ZnSe single crystals grown by chemical vapour transport technique
    M. J TAFRESHI
    K BALAKRISHNAN
    R DHANASEKARAN
    Journal of Materials Science, 1997, 32 : 3517 - 3521
  • [4] Micromorphological studies on the ZnSe single crystals grown by chemical vapour transport technique
    Tafreshi, MJ
    Balakrishnan, K
    Dhanasekaran, R
    JOURNAL OF MATERIALS SCIENCE, 1997, 32 (13) : 3517 - 3521
  • [5] Microhardness Studies of Vapour Grown Tin (II) Sulfide Single Crystals
    Hegde, S. S.
    Kunjomana, A. G.
    Ramesh, K.
    PROCEEDINGS OF THE 59TH DAE SOLID STATE PHYSICS SYMPOSIUM 2014 (SOLID STATE PHYSICS), 2015, 1665
  • [6] Electrical properties of HfSe2 single crystals grown by chemical vapour transport technique
    Radhakrishnan, K.
    Pilla, K. Mohanan
    ASIAN JOURNAL OF CHEMISTRY, 2008, 20 (05) : 3774 - 3778
  • [7] PRESSURE DEPENDENCE OF OPTICAL BAND GAP ZnSe SINGLE CRYSTALS GROWN BY CHEMICAL VAPOUR TRANSPORT TECHNIQUE
    Patel, A. J.
    Gandhi, J. R.
    Bhayani, M. K.
    Patel, S. G.
    Jani, A. R.
    JOURNAL OF OVONIC RESEARCH, 2009, 5 (02): : 21 - U8
  • [8] Optical and electrical properties of ZrSe3 single crystals grown by chemical vapour transport technique
    Kaushik Patel
    Jagdish Prajapati
    Rajiv Vaidya
    S. G. Patel
    Bulletin of Materials Science, 2005, 28 : 405 - 410
  • [9] Optical and electrical properties of ZrSe3 single crystals grown by chemical vapour transport technique
    Patel, K
    Prajapati, J
    Vaidya, R
    Patel, SG
    BULLETIN OF MATERIALS SCIENCE, 2005, 28 (05) : 405 - 410