Spatial separation of vacancy and interstitial defects formed in Si by oxygen-ion irradiation at elevated temperature

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作者：
Danilov, I. [1 ]
Boudinov, H. [1 ,2 ]
De Souza, J.P. [1 ]
Drozdov, Yu.N. [3 ]
机构：
[1] Instituto de Fisica, Univ. Federal do rio Grande do Sul, Rio Grande do Sul 91501-970, Brazil
[2] T. J. Watson Research Center, IBM, Yorktown Heights, NY 10598, United States
[3] Inst. for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod 603600, Russia
来源：
Journal of Applied Physics | 2005年 / 97卷 / 07期
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