Gas and heat treatment effects on the defect structure of a-SiC:H films

被引：0

作者：

Friessnegg, T. ^{[1
]}

Boudreau, M. ^{[1
]}

Mascher, P. ^{[1
]}

Simpson, P.J. ^{[1
]}

Puff, W. ^{[1
]}

机构：

[1] Technische Universitat Graz, Graz, Austria

来源：

Materials Science Forum | 1997年 / 258-263卷 / pt 2期

关键词：

Amorphous films - Atomic force microscopy - Crystal defects - Crystal structure - Desorption - Film growth - Fourier transform infrared spectroscopy - Heat treatment - Hydrogen bonds - Nanostructured materials - Semiconducting films - Semiconducting silicon compounds;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Open volumes formed during the film growth of a-SiC:H are interconnected throughout the amorphous network via channels and can trap gases at the large internal surfaces. The gases can be desorbed from the internal surfaces by heat treatments and leave behind an increased areal density of defects in the sample. A nano-crystalline structure grows upon annealing and irreversible structural changes take place, when breaking of Si-H and C-H bonds and formation of additional SiC and C-C bonds lead to film densification.

引用

页码：709 / 714

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