Properties and time dependences of silicon oxynitride films deposited by low-temperature photochemical vapor deposition

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作者：

Osaka Electro-Communication Univ, Osaka, Japan ^{[1
]}

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来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 1995年 / 34卷 / 8 A期

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Experimental; (EXP);

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摘要：

Silicon oxynitride films (SiNxOy) were deposited using mercury-sensitized photochemical vapor deposition. The photochemical vapor deposition (photo-CVD) SiNxOy film was used as an antireflective coating (ARC) for a single-crystal Si solar cell. It was found that the refractive index of SiNxOy film deposited at low temperatures showed marked time dependence.

引用

页码：4024 / 4025

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