HOOGE PARAMETERS FOR N- AND P-TYPE HG1 minus x CDx TE.

被引：0

作者：

Zhu, Xi-Chen ^{[1
]}

Wu, Xiaolan ^{[1
]}

van der Ziel, A. ^{[1
]}

Kelso, E.G. ^{[1
]}

机构：

[1] Univ of Minnesota, Electrical, Engineering Dep, Minneapolis, MN,, USA, Univ of Minnesota, Electrical Engineering Dep, Minneapolis, MN, USA

来源：

IEEE Transactions on Electron Devices | 1985年 / ED-32卷 / 07期

关键词：

ELECTRONS;

D O I：

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学科分类号：

摘要：

The values of the electron effective mass m//e* in Hg//1// minus //xCd//xTe have been calculated for x equals 0. 20, 0. 30, 0. 40. Using the Debye temperature theta //D for CdTe, the values of the Hooge parameter for Hg//1// minus //xCd//xTe have been estimated as a function of x and temperature T. In view of the uncertainty in theta //D, the estimate is probably correct within a factor of 2-3. theta //D for Hg//1// minus //xCd//xTe and its associated Hooge parameters have been directly calculated as a function of x; except for a possible temperature dependence of theta //D, the results should be correct near room temperature.

引用

页码：1353 / 1354

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