Evidence of interdot carrier coupling in In0.4Ga0.6As self-assembled quantum dots

被引：0
|
作者：
Urayama, J. [1 ]
Norris, T.B. [1 ]
Kamath, K. [1 ]
Bhattacharya, P. [1 ]
机构：
[1] Univ of Michigan, Ann Arbor, United States
来源：
Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series | 2000年
关键词：
Carrier concentration - Electron tunneling - Electronic density of states - Ground state - Optical pumping - Probes - Relaxation processes - Semiconducting indium gallium arsenide;
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学科分类号：
摘要：
Femtosecond differential transmission (DT) spectroscopy of InGa quantum dots (QDs) pumped resonantly with a narrow band pulse shows an extremely rapid spreading of the energy spectrum, indicating carrier coupling among dots of different sizes. Recent DT measurements in InGaAs QDs point to a rapid carrier energy spread based on tunneling.
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页码：38 / 39
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