Some features of radiation defect accumulation during ion bombardment of crystals

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作者：
PRIDACHIN NB
SMIRNOV LS
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来源：
| 1971年 / 5卷 / 01期
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摘要：
Description of a qualitative model of the processes which accompany the ion implantation in crystals is given. The model predicts the formation of surface layers enriched locally with excess vacancies. The presence of layers saturated with compensated vacancies explains many experimental observations.
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页码：142 / 143
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