Transition from one- to two-subband occupancy in the 2DEG of back-gated modulation-doped GaAs-AlxGa1-xAs heterostructures

被引:0
|
作者
Hamilton, A. R.
Linfield, E. H.
Kelly, M. J.
Ritchie, D. A.
机构
来源
Physical Review B: Condensed Matter | 1995年 / 51卷 / 24期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 10 条
  • [1] TRANSITION FROM ONE-SUBBAND TO 2-SUBBAND OCCUPANCY IN THE 2-DEG OF BACK-GATED MODULATION-DOPED GAAS-ALXGA1-XAS HETEROSTRUCTURES
    HAMILTON, AR
    LINFIELD, EH
    KELLY, MJ
    RITCHIE, DA
    JONES, GAC
    PEPPER, M
    PHYSICAL REVIEW B, 1995, 51 (24): : 17600 - 17604
  • [2] SINGLE-PARTICLE AND TRANSPORT SCATTERING TIMES IN A BACK-GATED GAAS/ALXGA1-XAS MODULATION-DOPED HETEROSTRUCTURE
    DAS, B
    SUBRAMANIAM, S
    MELLOCH, MR
    MILLER, DC
    PHYSICAL REVIEW B, 1993, 47 (15): : 9650 - 9653
  • [3] EXPERIMENTAL AND THEORETICAL-STUDIES OF THE 2DEG MOBILITY IN MODULATION-DOPED GAAS/AL(1-X)GAXAS HETEROSTRUCTURES
    LIN, BJF
    TSUI, DC
    SURFACE SCIENCE, 1986, 174 (1-3) : 397 - 398
  • [4] Electron mobility in one (two)-side modulation-doped GaAs/AlxGa1-xAs asymmetric quantum wells
    Lima, FMS
    Fanyao, Q
    Nunes, OAC
    Fonseca, ALA
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2001, 225 (01): : 43 - 61
  • [5] Optical characterization of AlxGa1-xAs/GaAs modulation-doped heterostructures grown under As2 and As4 fluxes
    Vazquez-Cortes, D.
    Soubervielle-Montalvo, C.
    Mendez-Garcia, V. H.
    Zamora-Peredo, L.
    Jimenez-Sandoval, S.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2010, 28 (03):
  • [6] A DETAILED INVESTIGATION OF THE D-X CENTER AND OTHER TRAP LEVELS IN GAAS-ALXGA1-XAS MODULATION-DOPED HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY
    DHAR, S
    HONG, WP
    BHATTACHARYA, PK
    NASHIMOTO, Y
    JUANG, FY
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (05) : 698 - 706
  • [7] Intensity dependence of the Fermi edge singularity in photoluminescence from modulation-doped AlxGa1-xAs/InyGa1-yAs/GaAs heterostructures
    Kissel, H
    Müller, U
    Walther, C
    Masselink, WT
    Mazur, YI
    Tarasov, GG
    Rud'ko, GY
    Valakh, MY
    Malyarchuk, V
    Zhuchenko, ZY
    PHYSICAL REVIEW B, 2000, 61 (12): : 8359 - 8362
  • [8] Strong interaction of Fermi-edge singularity and exciton related to N=2 subband in a modulation-doped AlxGa1-xAs/InyGa1-xAs/GaAs quantum well
    Xu, SJ
    Chua, SJ
    Tang, XH
    Zhang, XH
    PHYSICAL REVIEW B, 1996, 54 (24): : 17701 - 17704
  • [9] Interband transition studies of one-side modulation-doped AlxGa1-xAs/InyGa1-yAs/GaAs asymmetric step quantum wells
    Jung, M
    Kim, TW
    Lee, DU
    Choo, DC
    Kim, HJ
    Jeong, JH
    Kim, JH
    Cho, JW
    Yoo, KH
    Park, YM
    Kim, MD
    Kim, DL
    Seo, KY
    MATERIALS RESEARCH BULLETIN, 2002, 37 (12) : 2035 - 2041
  • [10] SELECTIVELY DELTA-DOPED ALXGA1-XAS/GAAS HETEROSTRUCTURES WITH HIGH TWO-DIMENSIONAL ELECTRON-GAS CONCENTRATIONS N2DEG-GREATER-THAN-OR-EQUAL-TO-1.5X10(12) CM-2 FOR FIELD-EFFECT TRANSISTORS
    SCHUBERT, EF
    CUNNINGHAM, JE
    TSANG, WT
    TIMP, GL
    APPLIED PHYSICS LETTERS, 1987, 51 (15) : 1170 - 1172