Two-band tunneling currents in metal-oxide-semiconductor capacitors at the transition from direct to Fowler-Nordheim tunneling regime

被引：0
|
作者：
Swiss Federal Inst of Technology, Lausanne, Switzerland [1 ]
机构：
来源：
Appl Phys Lett | / 6卷 / 842-843期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
MOS capacitors
引用
收藏
相关论文
共 50 条
  • [1] Two-band tunneling currents in metal-oxide-semiconductor capacitors at the transition from direct to Fowler-Nordheim tunneling regime
    Okhonin, S
    Fazan, P
    Guegan, G
    Deleonibus, S
    Martin, F
    APPLIED PHYSICS LETTERS, 1999, 74 (06) : 842 - 843
  • [2] Resonant Fowler-Nordheim tunneling emission from metal-oxide-semiconductor cathodes
    Mimura, H
    Abe, Y
    Ikeda, J
    Tahara, K
    Neo, Y
    Shimawaki, H
    Yokoo, K
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (02): : 803 - 806
  • [3] Resonant Fowler-Nordheim tunneling emission from metal-oxide-semiconductor cathodes
    Mimura, H
    Abe, Y
    Ikeda, J
    Tahara, K
    Neo, Y
    Shimawaki, H
    Yokoo, K
    IVMC'97 - 1997 10TH INTERNATIONAL VACUUM MICROELECTRONICS CONFERENCE, TECHNICAL DIGEST, 1997, : 421 - 425
  • [4] Comparison of the charges generated by Fowler-Nordheim tunneling injection in different oxides of metal-oxide-semiconductor capacitors
    Yard, G.
    Meinertzhagen, A.
    Petit, C.
    Jourdain, M.
    Mondon, F.
    Journal of Non-Crystalline Solids, 1997, 216 : 174 - 179
  • [5] THE EFFECT OF FOWLER-NORDHEIM TUNNELING CURRENT ON THIN SIO2 METAL-OXIDE-SEMICONDUCTOR CAPACITORS
    HOSOI, T
    AKIZAWA, M
    MATSUMOTO, S
    JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) : 2072 - 2076
  • [6] Comparison of the charges generated by Fowler-Nordheim tunneling injection in different oxides of metal-oxide-semiconductor capacitors
    Yard, G
    Meinertzhagen, A
    Petit, C
    Jourdain, M
    Mondon, F
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1997, 216 : 174 - 179
  • [7] EFFECT OF TUNNELING ELECTRONS IN FOWLER-NORDHEIM REGIME ON THE CURRENT-VOLTAGE CHARACTERISTICS AND MODEL OF DEGRADATION OF METAL-OXIDE-SEMICONDUCTOR CAPACITORS
    ELRHARBI, S
    JOURDAIN, M
    MEINERTZHAGEN, A
    JOURNAL OF APPLIED PHYSICS, 1994, 76 (02) : 1013 - 1020
  • [8] FOWLER-NORDHEIM TUNNELING AT A METAL-SEMICONDUCTOR INTERFACE
    ANDREWS, JM
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1971, 16 (08): : 840 - &
  • [9] CHARGE GENERATION IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS DURING FOWLER-NORDHEIM STRESS
    ELRHARBI, S
    JOURDAIN, M
    MEINERTZHAGEN, A
    ELHDIY, A
    PETIT, C
    JOURNAL DE PHYSIQUE III, 1994, 4 (06): : 1045 - 1051
  • [10] Transition from direct to Fowler-Nordheim tunneling in chemically reduced graphene oxide film
    Pandey, Srikrishna
    Biswas, Chandan
    Ghosh, Titisa
    Bae, Jung Jun
    Rai, Padmnabh
    Kim, Gil-Ho
    Thomas, K. J.
    Lee, Young Hee
    Nikolaev, Pavel
    Arepalli, Sivaram
    NANOSCALE, 2014, 6 (06) : 3410 - 3417
12345