Deep levels in GaAs:V

被引：0
|
作者：
Zeman, Jan [1 ]
Smid, Vaclay [1 ]
Kristofik, Jozef [1 ]
机构：
[1] Czechoslovak Acad of Sciences, Prague, Czech Republic
来源：
High Pressure Research | 1992年 / 9-10卷 / 1-2期
关键词：
Conduction band edge - Pressure coefficient - Schottky barrier height - Vanadium related acceptor level;
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摘要：
The influence of hydrostatic pressure on vanadium-related acceptor level in GaAs has been investigated in order to test the possibility of using it as a suitable reference level in heterojunctions. The impedance measurements made on GaAs:V/Ni Schottky barriers give its pressure coefficient of +110 meV/GPa with respect to the conduction band edge. Combining this value with the pressure coefficient of the Schottky barrier height, we conclude that the above hypothesis can be valid only if the pressure coefficient of the nickel work function in negligibly small in comparison with the above pressure coefficients. Quite different behaviour of EL2 ground level is also demonstrated.
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页码：343 / 346
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