Stopping powers of A1 for MeV Si ions

被引：2

作者：

Yixiong, Shen ^{[1
]}

Xiting, Lu ^{[1
]}

Zonghuang, Xia ^{[1
]}

Dingyu, Shen ^{[1
]}

Dongxing, Jiang ^{[1
]}

机构：

[1] Dept. Tech. Phys. Inst. Heavy Ion P., Peking University, 100871, Beijing, China

来源：

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms | 2000年 / 160卷 / 01期

基金：

中国国家自然科学基金;

关键词：

Aluminum - Metallic films - Rutherford backscattering spectroscopy - Silicon;

D O I：

10.1016/S0168-583X(99)00569-8

中图分类号：

学科分类号：

摘要：

Stopping powers of A1 film for Si ions (0.8-6.4 MeV) have been measured with Rutherford backscattering (RBS) technique. A new method to determine the stopping powers for low-velocity heavy projectiles was used. The experimental results of the stopping powers for low-velocity Si ions are smaller than those of the TRIM code and LSS theory.

引用

页码：11 / 15

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