Formation and growth of fractal patterns in high energy P+ -implanted silicon and N + Zn-implanted SiO2/GaAsP during thermal annealing

被引：0
|
作者：
Wu, Yuguang
Zhang, Tonghe
机构：
来源：
Science in China, Series E: Technological Sciences | / 40卷 / 04期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：2 / 349
相关论文
共 33 条
  • [1] Formation and growth of fractal patterns in high energy P~+-implanted silicon and N+Zn-implanted SiO2/GaAsP during thermal annealing
    吴瑜光
    张通和
    Science in China(Series E:Technological Sciences), 1997, (04) : 343 - 349
  • [2] Formation and growth of fractal patterns in high energy P+-implanted silicon and N+Zn-implanted SiO2/GaAsP during thermal annealing
    Wu, YG
    Zhang, TH
    SCIENCE IN CHINA SERIES E-TECHNOLOGICAL SCIENCES, 1997, 40 (04): : 343 - 349
  • [3] Formation and growth of fractal patterns in high energy P+-implanted silicon and N+Zn-implanted SiO2/GaAsP during thermal annealing
    Yuguang Wu
    Tonghe Zhang
    Science in China Series E: Technological Sciences, 1997, 40 : 343 - 349
  • [4] Formation of epitaxially ordered SiO2 in oxygen-implanted silicon during thermal annealing
    Shimura, T
    Hosoi, T
    Fukuda, K
    Umeno, M
    Ogura, A
    JOURNAL OF CRYSTAL GROWTH, 2002, 236 (1-3) : 37 - 40
  • [5] FURNACE AND RAPID THERMAL ANNEALING OF P+/N JUNCTIONS IN BF2+-IMPLANTED SILICON
    LUNNON, ME
    CHEN, JT
    BAKER, JE
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (10) : 2473 - 2475
  • [6] Lamp annealing effects on the formation process of implanted silicon nanocrystals in SiO2
    Iwayama, T. S.
    Hama, T.
    Hole, D. E.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2007, 257 : 85 - 89
  • [7] LATERAL SPREAD OF P+ IONS IMPLANTED IN SILICON THROUGH THE SIO2 MASK WINDOW
    SAKURAI, T
    KAWATA, H
    SATO, T
    HISATSUGU, T
    HASHIMOTO, H
    FURUYA, T
    JOURNAL OF APPLIED PHYSICS, 1979, 50 (03) : 1287 - 1290
  • [8] Silicon nanocrystal formation upon annealing of SiO2 layers implanted with Si ions
    G. A. Kachurin
    S. G. Yanovskaya
    V. A. Volodin
    V. G. Kesler
    A. F. Leier
    M. -O. Ruault
    Semiconductors, 2002, 36 : 647 - 651
  • [9] Influence of thermal annealing on silicon negative ion implanted SiO2 thin films
    Vishwakarma, S. B.
    Dubey, S. K.
    Dubey, R. L.
    Sulania, I.
    Kanjilal, D.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2024, 546
  • [10] Silicon nanocrystal formation upon annealing of SiO2 layers implanted with Si ions
    Kachurin, GA
    Yanovskaya, SG
    Volodin, VA
    Kesler, VG
    Leier, AF
    Ruault, MO
    SEMICONDUCTORS, 2002, 36 (06) : 647 - 651
1234