共 50 条
- [33] Critical thickness for islanded growth of highly strained InxGa1-xAs on GaAs(001) Japanese Journal of Applied Physics, Part 2: Letters, 1994, 33 (10 A):
- [34] CRITICAL THICKNESS FOR ISLANDED GROWTH OF HIGHLY STRAINED INXGA1-XAS ON GAAS(001) JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1994, 33 (10A): : L1427 - L1430
- [35] SURFACE LATTICE STRAIN RELAXATION AT THE INITIAL-STAGE OF HETEROEPITAXIAL GROWTH OF INXGA1-XAS ON GAAS BY MOLECULAR-BEAM EPITAXY JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1989, 28 (03): : L352 - L355
- [36] ULTRAUNIFORM INXGA1-XAS LAYERS ON INP GROWN BY MOLECULAR-BEAM EPITAXY JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 528 - 530
- [38] InxGa1-xAs/GaAs Quantum Rings Grown by Droplet Epitaxy PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, 2011, 1399
- [40] Monte Carlo simulation of In surface segregation during the growth of InxGa1-xAs on GaAs(001) PHYSICAL REVIEW B, 1996, 53 (03): : 998 - 1001