Growth of InxGa1-xAs on GaAs (001) by molecular beam epitaxy

被引:0
|
作者
机构
[1] Westwood, D.I.
[2] Woolf, D.A.
[3] Williams, R.H.
来源
Westwood, D.I. | 1600年 / 98期
关键词
Semiconducting Indium Compounds;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [31] DEFECT STRUCTURE OF INXGA1-XAS/GAAS GROWN ON MISORIENTED (100) SILICON BY MOLECULAR-BEAM EPITAXY
    CHRISTOU, A
    FLEVARIS, N
    GEORGAKILAS, A
    ILIADIS, AA
    MATERIALS LETTERS, 1989, 8 (3-4) : 109 - 111
  • [32] EXTENSION OF THE LAYER-BY-LAYER GROWTH REGIME OF INXGA1-XAS ON GAAS (001)
    GRANDJEAN, N
    MASSIES, J
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (11) : 2031 - 2034
  • [33] Critical thickness for islanded growth of highly strained InxGa1-xAs on GaAs(001)
    Grandjean, Nicolas
    Massies, Jean
    Raymond, Frederic
    Japanese Journal of Applied Physics, Part 2: Letters, 1994, 33 (10 A):
  • [34] CRITICAL THICKNESS FOR ISLANDED GROWTH OF HIGHLY STRAINED INXGA1-XAS ON GAAS(001)
    GRANDJEAN, N
    MASSIES, J
    RAYMOND, F
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1994, 33 (10A): : L1427 - L1430
  • [35] SURFACE LATTICE STRAIN RELAXATION AT THE INITIAL-STAGE OF HETEROEPITAXIAL GROWTH OF INXGA1-XAS ON GAAS BY MOLECULAR-BEAM EPITAXY
    NAKAO, H
    YAO, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1989, 28 (03): : L352 - L355
  • [36] ULTRAUNIFORM INXGA1-XAS LAYERS ON INP GROWN BY MOLECULAR-BEAM EPITAXY
    MATSUI, Y
    HAYASHI, H
    KIKUCHI, K
    IGUCHI, S
    YOSHIDA, K
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 528 - 530
  • [37] Molecular beam epitaxy growth and characterization of InxGa1-xAs(0.57&lex&le1) on GaAs using InAlAs graded buffer
    Wang, S.M.
    Karlsson, C.
    Rorsman, N.
    Bergh, M.
    Olsson, E.
    Andersson, T.G.
    Zirath, H.
    1997, Elsevier Sci B.V., Amsterdam, Netherlands (175-176)
  • [38] InxGa1-xAs/GaAs Quantum Rings Grown by Droplet Epitaxy
    Pankaow, Naraporn
    Panyakeow, Somsak
    Ratanathammaphan, Somchai
    PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, 2011, 1399
  • [39] ELECTRON-MOBILITY AND SI INCORPORATION IN INXGA1-XAS LAYERS GROWN ON GAAS BY MOLECULAR-BEAM EPITAXY
    EKENSTEDT, MJ
    SONGPONGS, P
    ANDERSSON, TG
    APPLIED PHYSICS LETTERS, 1992, 61 (07) : 789 - 791
  • [40] Monte Carlo simulation of In surface segregation during the growth of InxGa1-xAs on GaAs(001)
    Grandjean, N
    Massies, J
    Leroux, M
    PHYSICAL REVIEW B, 1996, 53 (03): : 998 - 1001