Anisotropic etching process for submicron patterning of Nb using CF4

被引:0
|
作者
Nagoya Univ, Nagoya, Japan [1 ]
机构
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:1515 / 1518
相关论文
共 50 条
  • [1] ANISOTROPIC ETCHING PROCESS FOR SUBMICRON PATTERNING OF NB USING CF4
    AKAIKE, H
    WATANABE, T
    FUJIMAKI, A
    HAYAKAWA, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1995, 34 (03): : 1515 - 1518
  • [2] ANISOTROPIC-PLASMA ETCHING OF POLYSILICON WITH CF4
    MADER, H
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (03) : C88 - C88
  • [3] The anisotropic etching of silicon in CF4, CF4+H2 and CF4-xClx plasma
    Rutkuniene, Z
    Grigonis, A
    Knizikevicius, R
    ADVANCED TECHNOLOGIES BASED ON WAVE AND BEAM GENERATED PLASMAS, 1999, 67 : 469 - 470
  • [4] Residuals caused by the CF4 gas plasma etching process
    Komine, K
    Araki, N
    Noge, S
    Ueno, H
    Hohkawa, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (5B): : 3010 - 3014
  • [5] CF4 ETCHING IN A DIODE SYSTEM
    BONDUR, JA
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (02) : 226 - 231
  • [6] CHARACTERISTICS OF CF4 PLASMA ETCHING
    JINNO, K
    MATSUMOTO, Y
    INOMATA, S
    DENKI KAGAKU, 1976, 44 (03): : 204 - 210
  • [7] CF4 ETCHING IN A DIODE SYSTEM
    BONDUR, JA
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (08) : C284 - C284
  • [8] FTIR measurements in an ICP etching plasma using CF4
    Abraham, I.C.
    Jung, G.
    Breun, R.A.
    Woods, R.C.
    IEEE International Conference on Plasma Science,
  • [9] Etching characteristics of Si using surface discharge plasma under Ar/CF4 and He/CF4 conditions
    Hamada, Toshiyuki
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2017, 66 : 212 - 214
  • [10] NB SURFACE EFFECTS ON THE PROPERTIES OF NB OXIDE BARRIER JUNCTIONS PREPARED USING A CF4 CLEANING PROCESS
    ASANO, H
    MICHIKAMI, O
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1986, 25 (04): : 575 - 579