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- [1] ANISOTROPIC ETCHING PROCESS FOR SUBMICRON PATTERNING OF NB USING CF4 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1995, 34 (03): : 1515 - 1518
- [3] The anisotropic etching of silicon in CF4, CF4+H2 and CF4-xClx plasma ADVANCED TECHNOLOGIES BASED ON WAVE AND BEAM GENERATED PLASMAS, 1999, 67 : 469 - 470
- [4] Residuals caused by the CF4 gas plasma etching process JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (5B): : 3010 - 3014
- [8] FTIR measurements in an ICP etching plasma using CF4 IEEE International Conference on Plasma Science,
- [10] NB SURFACE EFFECTS ON THE PROPERTIES OF NB OXIDE BARRIER JUNCTIONS PREPARED USING A CF4 CLEANING PROCESS JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1986, 25 (04): : 575 - 579