Fluorine-enhanced boron diffusion induced by fluorine postimplantation in silicon

被引:0
|
作者
机构
[1] Noda, Taiji
来源
Noda, T. (noda.taiji@jp.panasonic.com) | 1600年 / American Institute of Physics Inc.卷 / 96期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
(Edited Abstract)
引用
收藏
相关论文
共 50 条
  • [1] Fluorine-enhanced boron diffusion induced by fluorine postimplantation in silicon
    Noda, T
    [J]. JOURNAL OF APPLIED PHYSICS, 2004, 96 (07) : 3721 - 3726
  • [2] Fluorine-enhanced boron diffusion in amorphous silicon
    Jacques, JM
    Robertson, LS
    Jones, KS
    Law, ME
    Rendon, M
    Bennett, J
    [J]. APPLIED PHYSICS LETTERS, 2003, 82 (20) : 3469 - 3471
  • [3] Fluorine-enhanced boron diffusion in germanium-preamorphized silicon
    Jacques, JM
    Jones, KS
    Robertson, LS
    Li-Fatou, A
    Hazelton, CM
    Napolitani, E
    Rubin, LM
    [J]. JOURNAL OF APPLIED PHYSICS, 2005, 98 (07)
  • [4] FLUORINE-ENHANCED BORON MIGRATION INTO OXIDE FROM UNDERLYING SILICON
    SATO, Y
    KAWASHIMA, I
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1994, 141 (05) : 1381 - 1386
  • [5] FLUORINE-ENHANCED THERMAL NITRIDATION OF SILICON
    MCCLUSKEY, FP
    JACCODINE, RJ
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (08) : C317 - C317
  • [6] FLUORINE-ENHANCED PLASMA GROWTH OF NATIVE LAYERS ON SILICON
    CHANG, RPH
    CHANG, CC
    DARACK, S
    [J]. APPLIED PHYSICS LETTERS, 1980, 36 (12) : 999 - 1002
  • [7] FLUORINE-ENHANCED OXIDATION OF SILICON - EFFECTS OF FLUORINE ON OXIDE STRESS AND GROWTH-KINETICS
    KOUVATSOS, D
    HUANG, JG
    JACCODINE, RJ
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1991, 138 (06) : 1752 - 1755
  • [8] Suppression of boron transient enhanced diffusion in silicon and silicon germanium by fluorine implantation
    El Mubarek, HAW
    Wang, P
    Price, R
    Bonar, JM
    Zhang, J
    Hemment, PLF
    Ashburn, P
    [J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2005, 8 (1-3) : 103 - 109
  • [9] FLUORINE-ENHANCED NITRIDATION OF SILICON AT LOW-TEMPERATURES IN A MICROWAVE PLASMA
    RAY, SK
    MAITI, CK
    CHAKRABARTI, NB
    [J]. JOURNAL OF APPLIED PHYSICS, 1991, 70 (03) : 1874 - 1876
  • [10] Profile control in silicon nanostructures using fluorine-enhanced oxide passivation
    Zhao, Yi
    Zhang, Xin
    [J]. IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2008, 7 (01) : 40 - 47