LOCAL DENSITY OF ELECTRON STATES IN A SEMICONDUCTOR WITH DEFECTS.

被引:0
|
作者
Bazhenov, V.K.
Doicho, I.K.
Petukhov, A.G.
机构
来源
Soviet physics. Semiconductors | 1980年 / 14卷 / 01期
关键词
Compendex;
D O I
暂无
中图分类号
学科分类号
摘要
SEMICONDUCTOR MATERIALS
引用
收藏
页码:3 / 6
相关论文
共 50 条
  • [1] LOCAL DENSITY OF ELECTRON-STATES IN A SEMICONDUCTOR WITH DEFECTS
    BAZHENOV, VK
    DOICHO, IK
    PETUKHOV, AG
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (01): : 3 - 6
  • [2] Local reconstruction of partial auricular defects.
    Staudenmaier, R
    Grevers, G
    Kastenbauer, E
    LARYNGO-RHINO-OTOLOGIE, 2001, 80 (11): : 655 - 661
  • [3] ELECTRON-STATES LOCALIZED AT DEFECTS IN A SEMICONDUCTOR SUPERLATTICE
    GASHIMZADE, NF
    IVCHENKO, EL
    KOSOBUKIN, VA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1989, 23 (05): : 526 - 529
  • [4] THE LOCAL DENSITY OF STATES FOR THE NARROW CHANNELS OF THE SEMICONDUCTOR SURFACE
    YE, HJ
    CHINESE PHYSICS, 1987, 7 (02): : 331 - 336
  • [5] Causes and Prevention of Electron Beam Welding Defects.
    Ehrhardt, Horst
    ZIS-Mitteilungen, 1988, 30 (01): : 15 - 18
  • [6] CALCULATION OF LOCAL DENSITY OF STATES AT DEFECTS IN DIAMOND AND SILICON
    JONES, R
    KING, T
    PHYSICA B & C, 1983, 116 (1-3): : 72 - 75
  • [7] Direct probing of local-density-of-states in semiconductor nanostructures
    Kanisawa, K
    Tokura, Y
    Yamaguchi, H
    Hirayama, Y
    QUANTUM SENSING: EVOLUTION AND REVOLUTION FROM PAST TO FUTURE, 2003, 4999 : 379 - 386
  • [8] Local density of states in zero-dimensional semiconductor structures
    Kanisawa, K
    Butcher, MJ
    Tokura, Y
    Yamaguchi, H
    Hirayama, Y
    PHYSICAL REVIEW LETTERS, 2001, 87 (19)
  • [9] CALCULATION OF LOCAL DENSITY OF STATES AT DEFECTS IN DIAMOND AND SILICON.
    Jones, R.
    King, T.
    Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics, 1982, 116 B&C (1-3): : 72 - 75
  • [10] Electron states at point defects in non-uniform semiconductor alloys
    Natl Acad of Sciences, Kyiv, Ukraine
    J Phys Condens Matter, 3 (663-672):