High power InP/InGaAsP buried heterostructure laser for a wavelength of 1.15 μm

被引：0
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作者：
Rakovics, V. [1 ]
Serenyi, M. [1 ]
Koltai, F. [1 ]
Puspoki, S. [1 ]
Labadi, Z. [1 ]
机构：
[1] Research Inst for Technical Physics, of the Hungarian Acad of Sciences, Budapest, Hungary
来源：
Materials science & engineering. B, Solid-state materials for advanced technology | 1994年 / B28卷 / 1-3期
关键词：
Semiconductor lasers;
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页码：296 / 298
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