Electrically active defects induced by sputtering deposition on silicon: The role of hydrogen

被引：0
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作者：
Volpi, F. [1 ]
Peaker, A.R. [1 ]
Berbezier, I. [2 ]
Ronda, A. [2 ]
机构：
[1] Ctr. Electron. Mat., Devices/N., University of Manchester, Institute of Science and Technology, Manchester, M60 IQD, United Kingdom
[2] CRMC2, CNRS, Campus de Luminy, 13288 Marseille, France
来源：
Journal of Applied Physics | 2004年 / 95卷 / 09期
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页码：4752 / 4760
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