DIFFUSION OF Cd AND Zn INTO InP AND InGaAsP (Eg equals 0. 95-1. 35 ev).

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Matsumoto, Yoshishige
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Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes | 1983年 / 22卷 / 11期
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页码：1699 / 1704
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  • [1] DIFFUSION OF CD AND ZN INTO INP AND INGAASP (EG=0.95-1.35EV)
    MATSUMOTO, Y
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  • [2] EFFECT OF ZN AND MN ON CD-TE BOND STRENGTH IN Cd1 - xZnxTe(X equals 0. 04 plus or minus 0. 01) AND Cd1 - xMnxTe(X equals 0. 1 plus or minus 0. 005).
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  • [3] Cd和Zn在InP和InGaAsP中的扩散（Eg=0.95～1.35eV）
    Yashishige Matsumoto
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    [J]. 微纳电子技术, 1985, (03) : 13 - 19
  • [4] LIQUID PHASE EPITAXIAL GROWTH OF InGaAsP ON GaAs1 - yPy SUBSTRATES (y equals 0. 31 AND 0. 39).
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  • [10] REFRACTORY P-OHMIC-CONTACT TO GAAS AND GAXAL1 - XAS (X 0. 3) BASED ON DIFFUSION OF ZN IN A RAPID THERMAL FURNANCE.
    Tiwari, Sandip
    Hintzman, Jeffrey
    Callegari, Alessandro
    Wright, Steven
    [J]. IEEE Transactions on Electron Devices, 1987, ED-34 (11)
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