Fundamental experiments for the Bloch line memory.

Fundamental Bloch line memory functions such as domain stabilization, vertical Bloch line (VBL) pair propagation, and VBL pair injection were experimentally investigated. A ring-shaped domain was developed to give a propagation track for VBL pairs. Selective grooving of the magnetic film surface was seen to provide for formation and stabilization of the ring-domain. A VBL pair was propagated by a local in-plane field and VBL-pair separation and recombination using an in-plane field was also successfully carried out. The method used for VBL pair injection into the domain wall utilizes horizontal Bloch line (HBL) punch-through at the flank wall and successive domain chopping. The samples used in the experiments described are all (YSmLuCa)3 (FeGe)5O12 films (h = 4.0 μm, 4πMs = 195 G) grown using liquid-phase epitaxy onto GGG (111) plane substrates. This is the same as 5-μm bubble material.