共 50 条
- [1] CHARACTERISTICS OF GROWN-IN DISLOCATIONS IN CZOCHRALSKI-GROWN BENZOPHENONE SINGLE-CRYSTALS JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1994, 33 (4A): : 1995 - 2003
- [4] Axial microscopic distribution of grown-in defects in Czochralski-grown silicon crystals Umeno, Shigeru, 1600, (32):
- [5] AXIAL MICROSCOPIC DISTRIBUTION OF GROWN-IN DEFECTS IN CZOCHRALSKI-GROWN SILICON-CRYSTALS JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1993, 32 (5B): : L699 - L702
- [6] On the characterisation of grown-in defects in Czochralski-grown Si and Ge Journal of Materials Science: Materials in Electronics, 2008, 19 : 24 - 31
- [7] Grown-in lattice defects and diffusion in Czochralski-grown germanium DEFECTS AND DIFFUSION IN SEMICONDUCTORS - AN ANNUAL RETROSPECTIVE VII, 2004, 230 : 149 - 176
- [9] Characterization of grown-in dislocations in benzophenone single crystals by x-ray topography Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1992, 31 (07): : 2202 - 2205
- [10] On the Impact of Heavy Doping on Grown-in Defects in Czochralski-grown Silicon CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2011 (CSTIC 2011), 2011, 34 (01): : 1151 - 1157