Effects of annealing in Ar gas on ferroelectric properties of SrBi2Ta2O9 thin films

被引：0
|
作者：
Ohfuji, Sh.-I. [1 ]
Itsumi, M. [1 ]
机构：
[1] NTT System Electronics Lab, Kanagawa, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 1998年 / 37卷 / 5 A期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：2559 / 2564
相关论文
共 50 条
  • [1] Effects of annealing in Ar gas on ferroelectric properties of SrBi2Ta2O9 thin films
    Ohfuji, S
    Itsumi, M
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (5A): : 2559 - 2564
  • [2] Impact of forming gas annealing on the fatigue characteristics of ferroelectric SrBi2Ta2O9 thin films
    Wang, DS
    Yu, T
    Hu, A
    Wu, D
    Li, AD
    Liu, ZG
    Ming, NB
    [J]. APPLIED PHYSICS LETTERS, 2001, 79 (14) : 2237 - 2239
  • [3] Orientation dependent ferroelectric properties of SrBi2Ta2O9 ferroelectric thin films
    Moon, SE
    Back, SB
    Kwun, SI
    Song, TK
    Yoon, JG
    [J]. PROCEEDINGS OF THE 2001 12TH IEEE INTERNATIONAL SYMPOSIUM ON APPLICATIONS OF FERROELECTRICS, VOLS I AND II, 2001, : 933 - 936
  • [4] Infrared optical properties of SrBi2Ta2O9 ferroelectric thin films
    Huang, ZM
    Yang, PX
    Chang, Y
    Chu, JH
    [J]. JOURNAL OF APPLIED PHYSICS, 1999, 86 (03) : 1771 - 1773
  • [5] Laser annealing of SrBi2Ta2O9 thin films
    Zhang, ZG
    Zhu, JS
    Su, D
    Liu, JS
    Shen, HM
    Wang, YN
    Kang, L
    Zhou, J
    Yang, SZ
    Wu, PH
    [J]. THIN SOLID FILMS, 2000, 375 (1-2) : 172 - 175
  • [6] Temperature dependence of ferroelectric properties of SrBi2Ta2O9 thin films
    NEC Corp, Kawasaki, Japan
    [J]. Integr Ferroelectr, 1 -4 pt 1 (57-65):
  • [7] Temperature dependence of ferroelectric properties of SrBi2Ta2O9 thin films
    Noguchi, T
    Hase, T
    Miyasaka, Y
    [J]. INTEGRATED FERROELECTRICS, 1997, 17 (1-4) : 57 - 65
  • [8] Studies on the fatigue properties of SrBi2Ta2O9 ferroelectric thin films
    Zhang, ZG
    Liu, JS
    Wang, YN
    Zhu, JS
    Yan, F
    Chen, XB
    Shen, HM
    [J]. FERROELECTRICS, 1999, 229 (1-4) : 171 - 176
  • [9] PREPARATION AND FERROELECTRIC PROPERTIES OF SRBI2TA2O9 THIN-FILMS
    AMANUMA, K
    HASE, T
    MIYASAKA, Y
    [J]. APPLIED PHYSICS LETTERS, 1995, 66 (02) : 221 - 223
  • [10] Effects of tantalum adhesion layer on the properties of SrBi2Ta2O9 ferroelectric thin films
    Leu, CC
    Yang, MC
    Hu, CT
    Chien, CH
    Yang, MJ
    Huang, TY
    [J]. APPLIED PHYSICS LETTERS, 2001, 79 (23) : 3833 - 3835
12345