RESPONSE OF SILICON DETECTORS TO 1H AND 4He IONS.

被引：0
|
作者：
Lennard, W.N. [1 ]
Winterbon, K.B. [1 ]
机构：
[1] Univ of Western Ontario, London,, Ont, Can, Univ of Western Ontario, London, Ont, Can
来源：
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms | 1986年 / B24-25卷 / pt 2 Apr III期
关键词：
IONS; -; Measurements;
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摘要：
Recent measurements of the response of Si detectors to energetic light ions (**1H, **4He) show evidence for nonlinearity. These data are in distinct contrast to previous investigations which assumed that the energy required to create an electron-hole pair depended only on atomic number and not on energy for a given ion. A summary of experimental results relating to this topic will be given, in order to search for inconsistencies in the data. Using this comparison, further experiments capable of yielding unambiguous results are suggested.
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页码：1035 / 1038
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