CONTROL OF ZnSe FILM STOICHIOMETRY AT ZnSe/GeAs INTERFACE GROWN BY MOCVD.

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作者：
Suemune, Ikuo [1 ]
Ohmi, Koutoku [1 ]
Kanda, Takashi [1 ]
Yukutake, Kazutoshi [1 ]
Kan, Yasuo [1 ]
Yamanishi, Masamichi [1 ]
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[1] Hiroshima Univ, Higashi-Hiroshima, Jpn, Hiroshima Univ, Higashi-Hiroshima, Jpn
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| 1600年 / 25期
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