SELF-ALIGNED RECESSED GATE MESFET

被引：0
|
作者：
Anon
机构：
来源：
| 1600年 / 28期
关键词：
SEMICONDUCTOR DEVICE MANUFACTURE;
D O I：
暂无
中图分类号：
TN [电子技术、通信技术];
学科分类号：
0809 ;
摘要：
A self-aligned MESFET device is fabricated by growing, on a semi-insulating substrate, first an epitaxial film that forms the FET channel and, on top of it, a highly doped layer serving as a connection to ohmic contacts subsequently applied. After deposition of an insulating film, a trench is etched in the gate region, down to the channel. Gate insulation is obtained using sidewall techniques.
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