Low-voltage and low-current flash memory using source induced band-to-band tunneling hot electron injection to perform programming

被引：0
|
作者：
Pan, Liyang [1 ]
Zhu, Jun [1 ]
Zeng, Ying [1 ]
Fu, Yuxia [1 ]
Wu, Dong [1 ]
Duan, Zhigang [1 ]
Liu, Jianzhao [1 ]
Sun, Lei [1 ]
机构：
[1] Institute of Microelectronics, Tsinghua University, Beijing 100084, China
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2003年 / 42卷 / 4 B期
关键词：
D O I：
10.1143/jjap.42.2028
中图分类号：
学科分类号：
摘要：
9
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收藏
页码：2028 / 2032
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