Thin films of a-Si1-xCx:H deposited by PECVD: The r.f. power and H2 dilution role

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作者：
Prado, R.J. [1 ]
Fantini, M.C.A. [1 ]
Tabacniks, M.H. [1 ]
Pereyra, I. [2 ]
Flank, A.M. [3 ]
机构：
[1] Institute de Fisica, Universidade de São Paulo, CP 66318, 05315-970 São Paulo SP, Brazil
[2] Escola Politécnica, Universidade de São Paulo, DEE, CP 8174, São Paulo, 05508-970, Brazil
[3] LURE, Bat. 209 D, B.P. 34, FR-91898 Orsay Cedex, France
来源：
Materials Science Forum | 2000年 / 338卷
关键词：
Silane starving plasma regime;
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