Electric properties of Ni/n-PbTe and Ni/p-Pb0.5Sn0.5Te joined by plasma activated sintering

被引：0

作者：

Orihashi, M. ^{[1
,4
]}

Noda, Y. ^{[2
]}

Chen, L. ^{[1
]}

Kang, Y.-S. ^{[3
]}

Mono, A. ^{[3
]}

Hirai, T. ^{[1
]}

机构：

[1] Institute for Materials Research, Tohoku University, 2-1-1, Sendai, Miyagi 980-8577, Japan

[2] Faculty of Science and Engineering, Shimane University, Matsue, Shimane 690-8504, Japan

[3] National Aerospace Laboratory, Kakuda Research Center, Kakuda, Miyagi 981-1525, Japan

[4] Japan Society for the Promotion of Science (JSPS Research Fellow)

来源：

Materials Science Forum | 1999年 / 308-311卷

关键词：

Bonding - Composition - Electric properties - Electric variables measurement - Electrodes - Energy gap - Interfaces (materials) - Plasma applications - Semiconductor junctions - Sintering - Thermoelectricity;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

In order to fabricate PbTe thermoelectric elements, Ni electrodes were joined with n-PbTe and p-Pb0.5Sn0.5Te by plasma activated sintering (PAS). The characterization of the Ni/n-PbTe and Ni/p-Pb0.5Sn0.5Te junctions was carried out by measuring voltage distribution around the joint boundary. No potential voltage gap was found at the interface of Ni/n-PbTe joint. In the case of Ni/p-Pb0.5Sn0.5Te joint, a large potential gap was found at the interface, where the intermediate layer with complicated composition was detected by EPMA. A buffer layer of p-SnTe was introduced into the Ni/p-Pb0.5Sn0.5Te joint to reduce the interface resistivity between Ni and p-Pb0.5Sn0.5Te. Low resistivity joint of metal/semiconductor was obtained by insertion of p-SnTe between Ni and p-Pb0.5Sn0.5Te.

引用

页码：675 / 680

共 37 条

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