Maximum bit-rate analysis of various symmetric extremely shallow quantum well self-electro-optic effect devices under optimized input power

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Chung-Ang University, Department of Electronic Engineering, 221 Heuksuk-dong, Dongjak-ku, Seoul 156-756, Korea, Republic of ^{[1
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Opt Eng | / 4卷 / 677-687期

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[1] Maximum bit-rate analysis of various symmetric extremely shallow quantum well self-electro-optic effect devices under optimized input power
Lim, YS
Choi, YW
OPTICAL ENGINEERING, 1999, 38 (04) : 677 - 687
[2] QUANTUM-WELL SELF-ELECTRO-OPTIC EFFECT DEVICES
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OPTICAL AND QUANTUM ELECTRONICS, 1990, 22 : S61 - S98
[3] Analysis of switching dynamics of asymmetric Fabry-Perot symmetric self-electro-optic effect devices with extremely shallow quantum wells
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JOURNAL OF APPLIED PHYSICS, 1997, 82 (04) : 1936 - 1946
[4] Analysis of switching dynamics of asymmetric Fabry-Perot symmetric self-electro-optic effect devices with extremely shallow quantum wells
Chung-Ang Univ, Seoul, Korea, Republic of
J Appl Phys, 4 (1936-1946):
[5] LOW-VOLTAGE, HIGH-SATURATION, OPTICALLY BISTABLE SELF-ELECTRO-OPTIC EFFECT DEVICES USING EXTREMELY SHALLOW QUANTUM-WELLS
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ASOM, MT
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FOCHT, MW
GLOGOVSKY, KG
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PRZYBYLEK, GJ
SMITH, LE
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[6] Performance enhancement of non-biased symmetric self electro-optic effect device with extremely shallow multiple quantum wells using an impedance-mismatched asymmetric Fabry-Perot structure
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Lee, EH
COMPOUND SEMICONDUCTORS 1995, 1996, 145 : 1069 - 1072