TRANSISTOR PROCESS ENHANCEMENT.

被引：0
|
作者：
Dockerty, R.C.
机构：
来源：
IBM technical disclosure bulletin | 1984年 / 26卷 / 10 A期
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D O I：
暂无
中图分类号：
TN [电子技术、通信技术];
学科分类号：
0809 ;
摘要：
An enhanced bipolar transistor process technique is described to make LPNP transistors with sub-micron base widths. The base width is not dependent on photolithographic image definition. Polysilicon contacts are made to the emitter and collector of the LPNP device. The process also makes sub-micron width polysilicon resistors. The resistor width is not set by photolithography.
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页码：5124 / 5126
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