Tungsten chemical vapor deposition on silicon and silicon dioxide with plasma excited hydrogen

Nonselective chemical vapor deposition of tungsten films on silicon and silicon dioxide substrates by remote-plasma excited argon and hydrogen gaseous mixtures at substrate temperatures below 350°C was achieved. The growth rate shows an almost linear relationship with the hydrogen partial pressure above 0.6 Torr, but depends slightly on the argon partial pressure. The hydrogen partial pressure also influences the resistivity of the deposited films. The sufficient supply of the excited hydrogen improves growth rate and film properties.