R.F. magnetron sputtered WTi and WTi-N thin films as diffusion barriers between Cu and Si.

被引:0
|
作者
Laboratoire des Plasmas et des Couches Minces, IMN, 2 rue de la Houssinière, 44322 Nantes Cedex 3, France [1 ]
机构
来源
Vide: Science, Technique et Applications | 1997年 / 53卷 / 283 SUPPL.期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:122 / 123
相关论文
共 50 条
  • [1] Comparison of WTi and WTi(N) as diffusion barriers for Al and Cu metallization on Si with respect to thermal stability and diffusion behavior of Ti
    Fugger, M.
    Plappert, M.
    Schaefer, C.
    Humbel, O.
    Hutter, H.
    Danninger, H.
    Nowottnick, M.
    MICROELECTRONICS RELIABILITY, 2014, 54 (11) : 2487 - 2493
  • [2] Structure–Diffusion Relationship of Magnetron-Sputtered WTi Barriers Used in Indium Interconnections
    A. Le Priol
    E. Le Bourhis
    P.-O. Renault
    P. Muller
    H. Sik
    Journal of Electronic Materials, 2014, 43 : 641 - 647
  • [3] Structure-Diffusion Relationship of Magnetron-Sputtered WTi Barriers Used in Indium Interconnections
    Le Priol, A.
    Le Bourhis, E.
    Renault, P. -O.
    Muller, P.
    Sik, H.
    JOURNAL OF ELECTRONIC MATERIALS, 2014, 43 (03) : 641 - 647
  • [4] Strain-texture correlation in r.f. magnetron sputtered thin films
    Leoni, M
    Dong, YH
    Scardi, P
    EUROPEAN POWDER DIFFRACTION, PTS 1 AND 2, 2000, 321-3 : 439 - 444
  • [5] Preparation and Characterization of r.f. magnetron sputtered porous ZnO thin films
    Srinivasarao, K.
    Prameela, Ch.
    Kala, P. Venkata
    Mukhopadhyay, P. K.
    MATERIALS TODAY-PROCEEDINGS, 2015, 2 (09) : 4503 - 4508
  • [6] Investigation of DTS effect on r.f. magnetron sputtered ZnO thin films
    Duygulu, Nilufer Evcimen
    Kodolbas, Alp Osman
    CRYSTAL RESEARCH AND TECHNOLOGY, 2016, 51 (03) : 189 - 196
  • [7] Optical and electrical properties of R.F. magnetron sputtered ZnO:Al thin films
    Dimova-Malinovska, D.
    Tzenov, N.
    Tzolov, M.
    Vassilev, L.
    Materials science & engineering. B, Solid-state materials for advanced technology, 1998, B52 (01): : 59 - 62
  • [8] Reactively r.f. magnetron sputtered carbon nitride films
    Sebald, T
    Kaltofen, R
    Weise, G
    SURFACE & COATINGS TECHNOLOGY, 1998, 98 (1-3): : 1280 - 1285
  • [9] Analysis of Ti-Si-N diffusion barrier films obtained by r.f. magnetron sputtering
    Le Brizoual, L
    Guilet, S
    Lempérière, G
    Granier, A
    Coulon, N
    Lancin, M
    Turban, G
    MICROELECTRONIC ENGINEERING, 2000, 50 (1-4) : 509 - 513
  • [10] Characterization of Si3N4 thin films prepared by r.f. magnetron sputtering
    Vila, M
    Prieto, C
    Miranzo, P
    Osendi, MI
    Ramírez, R
    SURFACE & COATINGS TECHNOLOGY, 2002, 151 : 67 - 71