MULTIPLICATION OF DEFECTS IN SEMICONDUCTORS DURING MULTIPLE PASSAGE OF SHOCK WAVES.

Investigations were conducted into the relationships governing the pile-up of point defects in crystals in multiple passage of nondestructive shock waves with a short leading edge. The probability and coefficient of multiplication of defects are determined. In the case of formation of defects of the same type (inherent defects), it is shown that the measurements of electrical conductivity, the life of current carriers, and their mobility can be used to determined the concentration of defects, the coefficients of multiplication of defects on the inherent defects and solutes, and the energy level of defects and their contribution to scattering of the charge carriers.