Lanthanide doping in ZnS and SrS thin-film electroluminescent devices

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Dept. of Elec. and Comp. Engineering, Ctr. for Advanced Materials Research, Oregon State University, Corvallis, OR 97331-3211, United States ^{[1
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J Appl Phys | / 12卷 / 6810-6815期

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[1] Lanthanide doping in ZnS and SrS thin-film electroluminescent devices
Keir, PD
Maddix, C
Baukol, BA
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JOURNAL OF APPLIED PHYSICS, 1999, 86 (12) : 6810 - 6815
[2] Electrical characterization of white SrS/ZnS multilayer thin-film electroluminescent devices
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Meuret, Y
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[3] THIN-FILM ELECTROLUMINESCENT DEVICES USING CAS AND SRS
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[4] Output characteristics and optical efficiency of SrS:Ce and ZnS:Mn thin-film electroluminescent devices
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[5] VACUUM DEPOSITION OF ZNS THIN-FILM ELECTROLUMINESCENT DEVICES
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[6] Oxygen contamination in SrS:Ce thin-film electroluminescent devices
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[7] Electroluminescence parameters of thin-film ZnS: Mn electroluminescent devices
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[8] Electroluminescence parameters of thin-film ZnS: Mn electroluminescent devices
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[9] TBOF COMPLEX CENTERS IN ZNS THIN-FILM ELECTROLUMINESCENT DEVICES
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[10] OXYGEN CONTAMINATION IN SRS-CE THIN-FILM ELECTROLUMINESCENT DEVICES
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