Formation of self-organized In0.5Ga0.5As quantum dots on GaAs by molecular beam epitaxy

被引：0
|
作者：
Chyi, Jen-Inn [1 ]
Nee, Tzer-En [1 ]
Lee, Ching-Ting [1 ]
Shieh, Jia-Lin [1 ]
Pan, Jen-Wei [1 ]
机构：
[1] Natl Central Univ, Chung-Li, Taiwan
来源：
Journal of Crystal Growth | 1997年 / 175-176卷 / pt 2期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：777 / 781
相关论文
共 50 条
  • [1] Formation of self-organized In0.5Ga0.5As quantum dots on GaAs by molecular beam epitaxy
    Chyi, JI
    Nee, TE
    Lee, CT
    Shieh, JL
    Pan, JW
    [J]. JOURNAL OF CRYSTAL GROWTH, 1997, 175 : 777 - 781
  • [2] Influence of substrate orientation on In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy
    Jiang, WH
    Xu, HZ
    Xu, B
    Ye, XL
    Zhou, W
    Ding, D
    Liang, JB
    Wang, ZG
    [J]. PHYSICA E, 2000, 8 (02): : 134 - 140
  • [3] Investigation of In0.5Ga0.5As/GaAs quantum dots
    Atici, Y
    Hovesepain, A
    Cherns, D
    Polimeni, A
    Henini, M
    Eaves, L
    [J]. ELECTRON MICROSCOPY 1998, VOL 3: MATERIALS SCIENCE 2, 1998, : 433 - 434
  • [4] Surface morphology and optical property of 1.3 μm In0.5Ga0.5As/GaAs self-organized quantum dots grown by MBE
    Lan, Q
    Niu, ZC
    Zhou, DY
    Kong, YC
    Wang, XD
    Miao, ZH
    Feng, SL
    [J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2003, 17 (1-4): : 114 - 116
  • [5] Selective control of self-organized In0.5Ga0.5As/GaAs quantum dot properties:: Quantum dot intermixing
    Bhattacharyya, D
    Helmy, AS
    Bryce, AC
    Avrutin, EA
    Marsh, JH
    [J]. JOURNAL OF APPLIED PHYSICS, 2000, 88 (08) : 4619 - 4622
  • [6] Suppression of interdiffusion in In0.5Ga0.5As/GaAs quantum dots
    Fu, L
    Lever, P
    Tan, HH
    Jagadish, C
    Reece, P
    Gal, M
    [J]. COMMAD 2002 PROCEEDINGS, 2002, : 503 - 506
  • [7] Evolution of surface morphology and photoluminescence characteristics of 1.3-μm In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy
    魏全香
    任正伟
    贺振宏
    牛智川
    [J]. Chinese Optics Letters, 2009, 7 (01) : 52 - 55
  • [8] Evolution of surface morphology and photoluminescence characteristics of 1.3-μm In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy
    Wei, Quanxiang
    Ren, Zhengwei
    He, Zhenhong
    Niu, Zhichuan
    [J]. CHINESE OPTICS LETTERS, 2009, 7 (01) : 52 - 55
  • [9] Lasing at three-dimensionally quantum-confined sublevel of self-organized In0.5Ga0.5As quantum dots by current injection
    Shoji, H
    Mukai, K
    Ohtsuka, N
    Sugawara, M
    Uchida, T
    Ishikawa, H
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1995, 7 (12) : 1385 - 1387
  • [10] Matrix-dependent structural and photoluminescence properties of In0.5Ga0.5As quantum dots crown by molecular beam epitaxy
    Nee, TE
    Yeh, NT
    Chyi, JI
    Lee, CT
    [J]. SOLID-STATE ELECTRONICS, 1998, 42 (7-8) : 1331 - 1334
12345