EMPIRICAL MODELING OF SINGLE-EVENT UPSET (SEU) IN NMOS DEPLETION-MODE-LOAD STATIC RAM (SRAM) CHIPS.

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作者：
Zoutendyk, J.A. [1 ]
Smith, L.S. [1 ]
Soli, G.A. [1 ]
Smith, S.L. [1 ]
Atwood, G.E. [1 ]
Thierberger, P. [1 ]
机构：
[1] JPL, Pasadena, CA, USA, JPL, Pasadena, CA, USA
来源：
IEEE Transactions on Nuclear Science | 1986年 / NS-33卷 / 06期
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