CONTROLLING THE GROWTH OF VARIABLE ZONE HETEROSTRUCTURES OF GaAs-AlxGa1 - xAs IN A TEMPERATURE-GRADIENT FIELD.

被引：0

作者：

Gaponenko, V.N. ^{[1
]}

Lunin, L.S. ^{[1
]}

Lunina, O.D. ^{[1
]}

机构：

[1] Novocherkassk Polytechnic Inst, Novocherkassk, USSR, Novocherkassk Polytechnic Inst, Novocherkassk, USSR

来源：

| 1600年 / 27期

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[1] THE OPERATION OF THE GROWTH OF GAAS-ALXGA1-XAS VARIZONE HETEROSTRUCTURES IN A TEMPERATURE-GRADIENT FIELD
GAPONENKO, VN
LUNIN, LS
LUNINA, OD
IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1984, 27 (11): : 44 - 47
[2] DOPANT DISTRIBUTION IN VARIABLE-ZONE ALXGA1-XAS LAYERS GROWN IN A TEMPERATURE-GRADIENT FIELD
LOZOVSKII, VN
LUNIN, LS
LUNINA, OD
NAUGOLNOV, VA
RATUSHNYI, VI
INORGANIC MATERIALS, 1985, 21 (02) : 151 - 154
[3] CONTROLLING THE GROWTH OF PERFECT, VARIABLE-BAND GAAS ALXGA1-XAS HETEROSTRUCTURES
GAPONENKO, VN
LUNIN, LS
LUNINA, OD
RATUSHNYI, VI
INORGANIC MATERIALS, 1987, 23 (07) : 979 - 982
[4] MIGRATION OF LIQUID GAALAS INCLUSIONS IN ALXGA1-XAS CRYSTALS IN A TEMPERATURE-GRADIENT FIELD
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IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1982, 25 (07): : 108 - 110
[5] ALUMINUM ARSENIDE DISTRIBUTION IN VARIZONE ALXGA1-XAS FILMS GROWING IN A TEMPERATURE-GRADIENT FIELD
LUNINA, OD
LUNIN, LS
ROZENSHTEIN, GE
IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1982, 25 (09): : 115 - 117
[6] THE INFLUENCE OF GROWTH CHEMISTRY ON THE MOVPE GROWTH OF GAAS AND ALXGA1-XAS LAYERS AND HETEROSTRUCTURES
KUECH, TF
VEUHOFF, E
KUAN, TS
DELINE, V
POTEMSKI, R
JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) : 257 - 271
[7] PHOTO-ELECTRIC PROPERTIES OF LINEAR-GRADIENT ALXGA1-XAS-GAAS HETEROSTRUCTURES
ALFEROV, ZI
ANDREEV, VM
KOROLKOV, VI
KONNIKOV, SG
TABAROV, TS
TADZHIBAEV, FM
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1978, 12 (02): : 164 - 168
[8] TEMPERATURE-DEPENDENCE OF MOBILITY IN ALXGA1-XAS/GAAS HETEROSTRUCTURES FOR IMPURITY SCATTERING
GOLD, A
PHYSICAL REVIEW B, 1990, 41 (12): : 8537 - 8540
[9] EFFECT OF A PARALLEL MAGNETIC-FIELD ON TUNNELING IN GAAS/ALXGA1-XAS HETEROSTRUCTURES
LEBENS, JA
SILSBEE, RH
WRIGHT, SL
PHYSICAL REVIEW B, 1988, 37 (17): : 10308 - 10311
[10] VARIABLE ANGLE OF INCIDENCE SPECTROSCOPIC ELLIPSOMETRY - APPLICATION TO GAAS-ALXGA1-XAS MULTIPLE HETEROSTRUCTURES
SNYDER, PG
ROST, MC
BUABBUD, GH
WOOLLAM, JA
ALTEROVITZ, SA
JOURNAL OF APPLIED PHYSICS, 1986, 60 (09) : 3293 - 3302

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