Hot carrier relaxation in InAs/GaAs quantum dots

被引：0
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作者：
Heitz, R. [1 ]
Mukhametzanov, I. [2 ]
Born, H. [1 ]
Grundmann, M. [1 ]
Hoffmann, A. [1 ]
Madhukar, A. [2 ]
Bimberg, D. [1 ]
机构：
[1] Inst. für Festkörperphysik, TU. Berlin, H., Berlin, Germany
[2] Dept. of Mat. Sci. and Engineering, University of Southern California, Los Angeles, CA, United States
来源：
Physica B: Condensed Matter | 1999年 / 272卷 / 01期
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页码：8 / 11
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